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TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 1 of 13 - disclaimer: sub j ect to chan g e without notice applications ? point-to-point radio ? k-band sat-com qfn 4x4 mm 20l product features functional block diagram ? frequency range: 17.7 ? 19.7 ghz ? power: 32.5 dbm psat, 31 dbm p1db ? gain: 23 db ? toi: 41 dbm at 20 dbm/tone ? nf: 7 db ? integrated power detector ? bias: vd = 6 v, idq = 900 ma, vg = -0.68 v typical ? package dimensions: 4.0 x 4.0 x 0.85 mm general description pin configuration the triquint TGA4532-SM is a k-band power amplifier. the TGA4532-SM operates from 17.7 - 19.7 ghz and is designed using triquint?s power phemt production process. the TGA4532-SM typically provides 32.5 dbm of saturated output power with small signal gain of 23 db. the TGA4532-SM is available in a low-cost, surface mount 20 lead 4x4 qfn package and is ideally suited for point-to-point radio. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 n/c 2 rf in 7, 19 vg 8, 18 gnd 12 rf out 9, 17 vd 15 vdet 16 vref v ordering information part no. eccn description TGA4532-SM 3a001.b.2.c k-band power amplifier standard t/r size = 1000 pieces on a 7? reel. 18 2 5 4 3 67 8 1 20 19 14 10 9 11 12 13 16 17 15 ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 2 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` specifications absolute maximum ratings parameter rating drain voltage,vd +6.5 v gate voltage,vg -4 to 0 v drain to gate voltage, vd ? vg 10 v drain current, id 1960 ma gate current, ig -8.2 to 113 ma power dissipation, pdiss 12.7 w rf input power, cw, t = 25oc 26 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v idq 900 ma id_drive (under rf drive) 1200 ma vg -0.68 v electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, idq = 900 ma, vg = -0.68 v typical . parameter min typical max units operational frequency range 17.7 19.7 ghz gain 19 23 db input return loss 10 12 db output return loss 10 15 db output power @ saturation 32.5 dbm output power @ 1db gain compression 29.5 31 dbm output toi 38 41 dbm noise figure 7 db gain temperature coefficient -0.023 db/c power temperature coefficient -0.005 db/c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 3 of 13 - disclaimer: sub j ect to chan g e without notice specifications (cont.) thermal and reliability information ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 8.51 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vd = 6 v, idq = 900 ma, pdiss = 5.4 w tch = 131 c tm = 9.5 e+6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 85 c, vd = 6 v, id = 1200 ma, pout = 32.5 dbm, pdiss = 5.4 w tch = 131 c tm = 9.5 e+6 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 25 50 75 100 125 150 175 200 median lifetime (hours) channel temperature (c) fet5 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 4 of 13 - disclaimer: sub j ect to chan g e without notice typical performance ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` 0 5 10 15 20 25 30 14 15 16 17 18 19 20 21 22 return loss (db) frequency (ghz) irl, orl vs frequency vd = 6 v, idq = 900 ma, vg = -0.68 v, +25 o c orl irl 21 22 23 24 25 26 14 15 16 17 18 19 20 21 22 gain (db) frequency (ghz) gain vs. frequency vd = 6 v, idq = 900 ma, vg = -0.68 v, +25 o c 500 700 900 1100 1300 1500 10 15 20 25 30 35 -10-8-6-4-2024681012 id (ma) output power (dbm), gain (db) input power (dbm) power, gain, id vs. input power vd = 6 v, idq = 900 ma, vg = -0.68 v, +25 o c power gain id @ 18.5 ghz -50 -45 -40 -35 -30 -25 -20 15 16 17 18 19 20 21 22 23 24 25 26 27 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, idq = 900 ma, vg = -0.68 v, 25 o c 17.5 ghz 18.5 ghz 19.5 ghz 26 27 28 29 30 31 32 33 34 16 17 18 19 20 21 output power (dbm) frequency (ghz) output power vs. frequency vd = 6 v, idq = 900 ma, vg = -0.68 v, +25 o c psat p1db 38 39 40 41 42 43 16 17 18 19 20 21 otoi (dbm) frequency (ghz) otoi vs. frequency vs. pout/ tone vd = 6 v, idq = 900 ma, vg = - 0.68 v, +25 o c 19.00 dbm/tone 20.00 dbm/tone 21.00 dbm/tone www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 5 of 13 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` 27 28 29 30 31 32 16 17 18 19 20 21 p1db (dbm) frequency (ghz) p1db vs. frequency vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, +25 o c 6v, 980ma 6v, 900ma 6v, 816ma 5v, 816ma 5.5 6.0 6.5 7.0 7.5 16 17 18 19 20 21 nf (db) frequency (ghz) noise figure vs. frequency vd = 6 v, idq = 900 ma, vg = -0.68 v,+25 o c 35 37 39 41 43 45 16 17 18 19 20 21 otoi (dbm) frequency (ghz) otoi vs. frequency vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, +25 o c 6v, 980ma 6v, 900ma 6v, 816ma 5v, 816ma @ 20 dbm/tone 28 29 30 31 32 33 16 17 18 19 20 21 saturated power (dbm) frequency (ghz) saturated power vs. frequency vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, +25 o c 6v, 980ma 6v, 900ma 6v, 816ma 5v, 816ma 21 22 23 24 25 26 14 15 16 17 18 19 20 21 22 gain (db) frequency (ghz) gain vs. frequency vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, +25 o c 6v, 980ma 6v, 900ma 6v, 816ma 5v, 816ma -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 14 16 18 20 22 24 26 28 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, @ 18.5 ghz, +25 o c 6v, 980ma 6v, 900ma 6v, 816ma 5v, 816ma www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 6 of 13 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) 5.5 6.0 6.5 7.0 7.5 16 17 18 19 20 21 nf (db) frequency (ghz) noise figure vs. frequency vs. bias vd = 5 - 6 v, idq = 816 - 980 ma, +25 o c ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` 18 19 20 21 22 23 24 25 26 27 28 14 15 16 17 18 19 20 21 22 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, idq = 816 ma, vg = -0.71 v 6v, 980ma - 40 c 6v, 900ma +25 c 6v, 816ma +85 c 5v, 816ma 29 30 31 32 33 34 16 17 18 19 20 21 saturated power (dbm) frequency (ghz) psat vs. frequency vs. temperature vd = 6 v, idq = 816 ma, vg = - 0.71 v -40 c +25 c +85 c 28 29 30 31 32 33 16 17 18 19 20 21 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, idq = 816 ma, vg = - 0.71 v -40 c +25 c +85 c 0.01 0.1 1 10 0 4 8 121620242832 vdiff (v) output power (dbm) power detector vs. pout vs.temperature vd = 6 v, idq = 816 ma, vg = -0.71 v, @ 18.5 ghz vdiff -40 c vdiff +25 c vdiff +85 c 35 36 37 38 39 40 41 42 43 44 45 16 17 18 19 20 21 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature vd = 6 v, idq = 816 ma, vg = -0.71 v @ 20 dbm/tone -40 c +25 c +85 c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 7 of 13 - disclaimer: sub j ect to chan g e without notice application circuit TGA4532-SM vg can be biased from either side (pin 7 or pin 19), and the non-biased side can be left open. vd must be biased from both sides (pin 9 and pin 17). bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 900 ma. this will be ~ vg = -0.68 v typical turn vd to 0 v apply rf signal to rf input turn vg to 0 v ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 8 of 13 - disclaimer: sub j ect to chan g e without notice pin des cription ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` pin symbol description 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 n/c no internal connection; must be grounded on pcb 2 rf in input, matched to 50 ohms 7, 19 vg gate voltage. bias network is required; see application circuit on page 7 as an example. can be biased from either pin. top view 8, 18 gnd internal grounding; can be grounded or left open on pcb 12 rf out output, matched to 50 ohms 9, 17 vd drain voltage. bias network is required; see application circuit on page 7 as an example. both pins must be biased. 15 vdet detector diode output voltage. varies with rf output power. 16 vref reference diode output voltage. 21 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see mounting conf iguration on page 11 for suggested footprint. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 9 of 13 - disclaimer: sub j ect to chan g e without notice applications information pc board layout top rf layer is 0.008? thick rogers ro4003, ? r = 3.38. metal layers are 0.5-oz copper. microstrip 50 ? line detail: width = 0.0175?. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount proce sses vary from company to company, careful process development is recommended. for further technical information, refer to the TGA4532-SM ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` product information page. c1 c2 c5 c3 c4 c7 c6 r1 bill of material ref des value description manufacturer part number c1, c2, c3, c4 100 pf cap, 0402, 50v, 5%, npo various c5, c6, c7 1 uf cap, 0603, 50v, 5%, cog various r1 15 ohms res, 0402, 1/16w, 5%, smd various www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 10 of 13 - disclaimer: sub j ect to chan g e without notice mechanical information package informati ll dimensions are in millimete on and dimensions rs. t lea omp e base is c opper a ateria dau it is th ree (m flow temperatur mum 2 erature) so th -sm e marked w nd a l arked below the rt designator. the ?yy? represents the last of the ed, t ? is the work wee , and the ?xxxx? is an generated number. 4532 yyww xxxx his package is compatible wi d-free/rohs-c both lead-f liant. the packag aximum 260 c re lloy and the plating m e) and tin-lead (maxi l on the leads is nip 45 c reflow temp ldering processes . e tga4532 will b ith the ?4532? designator a ot code m pa two digits year the part was manu factur he ?ww k ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 11 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` 0.440 0.880 0.254 0.508 (0.010") (0.020") (0.017") (0.034") mechanical information (cont.) nches). notes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. 2. ground / thermal vias are critical for the proper performance of this device. vias have a final plated thru diameter of 0.254 mm (0.010?). mounting configuration all dimensions are in millimeters (i tape and reel information tape and reel specifications for this part are also available on the triquint website in the ?application notes? section. standard t/r size = 1000 pieces on a 7 x 0.5? reel. carrier and cover tape dimensions part feature symbol size (in) size (mm) cavity length a0 0.171 4.35 width b0 0.171 4.35 depth k0 0.043 1.1 pitch p1 0.315 8.0 distance between centerline cavity to perforation length direction p2 0.079 2.0 cavity to perforation width direction f 0.217 5.5 cover tape width c 0.374 9.5 carrier tape width w 0.472 12.0 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 12 of 13 - disclaimer: sub j ect to chan g e without notice product compliance information jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020, lead free solder, 260 his part is compliant with eu 2002/95/ec rohs rective (restrictions on th e use of certain hazardous bstances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating le l 1 at +260 c convection reflow th part is rated moisture se nsitivity level 1 at 260c per edec standard ipc/jedec j-std-020. esd information t es d rating: class 1a value: ? 250v and ? 500v test: human body model (hbm) andard: di su st ve e j eccn us department of commerce 3a001.b.2.c recommended soldering temperature profile ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532-SM k-band power amplifier preliminary data sheet: rev e 04/27/2012 - 13 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ` contact information for the latest specifications, triquint: additional product information, worldwi n locations, and information abou t web: www.triquint.com de sales and distributio tel: +1.97 info-sales@tqs.com 2.994.8465 email: fax: +1.97 504 ation information: 2.994.8 for technical questions a nd applic email: info-networks@tqs.com important no tice ed to be reliable. ing the information contained formation contained herein. triquint soever for the use of e i herein. the information contained erein is provided "as is, where is" and with all faults, and th e en risk associated with such information is entirely with e user. all information contained herein is subject to change without notice. customers should obtain and verify the latest rmation before placing orders for triquint products. the information contained herein or any use of such does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty ion itself or anything described by such information. nents in medical, life-saving, or life-sustaining o cause severe personal injury or death. copyright ? 2012 triquint semiconductor, inc. all rights reserved. the information contained herein is believ t riquint makes no warrant i es regard herein. triquint assumes no responsibility or liability wh assumes no responsibility or liability what atso ever for any of the in th rmation contained nfo tire h th relevant info information rights, whether with regard to such informat triquint products are not warranted or authorized for use as critical compo applications, or other applications where a failure would reason ably be expected t www.datasheet.net/ datasheet pdf - http://www..co.kr/

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